the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor pa2211t1m p-channel mos fet for switching data sheet document no. g19452ej1v0ds00 (1st edition) date published september 2008 ns printed in japan 2008 description the pa2211t1m is p-channel mos field effect transistor designed for power management applications of portable equipments, such as load switch. features ? low on-state resistance r ds(on)1 = 25 m max. (v gs = ? 4.5 v, i d = ? 7.5 a) r ds(on)2 = 34 m max. (v gs = ? 2.5 v, i d = ? 3.8 a) r ds(on)3 = 66 m max. (v gs = ? 1.8 v, i d = ? 3.8 a) ? built-in gate protection diode ? ? 1.8 v gate drive available ordering information part number packing package pa2211t1m-t1-at note pa2211t1m-t2-at note 8 mm embossed taping 3000 p/reel 8-pin vsof (1629) 0.011 g typ. note pb-free (this product does not c ontain pb in external electrode and other parts.) absolute maximum ratings (t a = 25 c, all terminals are connected.) drain to source voltage (v gs = 0 v) v dss ? 12 v gate to source voltage (v ds = 0 v) v gss m 8 v drain current (dc) i d(dc) m 7.5 a drain current (pulse) note1 i d(pulse) m 30 a total power dissipation note2 p t1 1.1 w total power dissipation (pw = 5 sec) note2 p t2 2.5 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt remark the diode connected between the gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circui t is externally required if a voltage exceeding the rated voltage may be applied to this device. package drawing (unit: mm) 2.9 0.1 0.145 0.05 0 to 0.025 0.32 0.05 0.8 0.05 1.6 0.1 1.9 0.1 0.05 m s a 0.05 s 0.225 0.1 s a 1, 2, 3, 6, 7, 8: drain 4 : gate 5 : source 85 4 1 0.65 equivalent circuit source body diode gate protection diode gate drain
data sheet g19452ej1v0ds 2 pa2211t1m electrical characteristics (t a = 25 c, all terminals are connected.) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = ? 12 v, v gs = 0 v -10 a gate leakage current i gss v gs = m 8 v, v ds = 0 v m 10 a gate to source cut-off voltage v gs(off) v ds = ? 10 v, i d = ? 1 ma ? 0.45 ? 1.5 v forward transfer admittance note | y fs | v ds = ? 10 v, i d = ? 3.8 a 5 s drain to source on-state resistance note r ds(on)1 v gs = ? 4.5 v, i d = ? 7.5 a 21 25 m r ds(on)2 v gs = ? 2.5 v, i d = ? 3.8 a 25 34 m r ds(on)3 v gs = ? 1.8 v, i d = ? 3.8 a 34 66 m input capacitance c iss v ds = ? 10 v, 1350 pf output capacitance c oss v gs = 0 v, 255 pf reverse transfer capacitance c rss f = 1 mhz 215 pf turn-on delay time t d(on) v dd = ? 10 v, i d = ? 3.8 a, 10.7 ns rise time t r v gs = ? 4.0 v, 16.7 ns turn-off delay time t d(off) r g = 10 101.0 ns fall time t f 76.4 ns total gate charge q g v dd = ? 9.6 v, 14.9 nc gate to source charge q gs v gs = ? 4.5 v, 2.8 nc gate to drain charge q gd i d = ? 7.5 a 4.0 nc body diode forward voltage note v f(s-d) i f = ? 7.5 a, v gs = 0 v 0.88 1.2 v reverse recovery time t rr i f = ? 7.5 a, v gs = 0 v, 60 ns reverse recovery charge q rr di/dt = ? 47 a/ s 19 nc note pulsed test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 d.u.t. r l v dd i g = ? 2 ma v gs wave form v ds wave form v gs ( ? ) v ds ( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% v gs wave form v ds wave form v gs ( ? ) v ds ( ? ) 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet g19452ej1v0ds 3 pa2211t1m typical characteristics (t a = 25 c) derating factor of forward bias safe operating area forward bias safe operating area dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t a - ambient temperature - c i d - drain current - a -0.01 -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 i d(pulse) 1 i m i s 1 i 0 m i s 5 i s p w = 3 0 0 s 1 i 0 0 m i s r d s ( o n ) l i m i t e d ( v g s = ? 4 . 5 v ) single pulse mounted on glass epoxy board o f 25.4 mm x 25.4 mm x 0.8 mmt i d(dc) p o w e r d i s s i p a t i o n l i m i t e d v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.1 1 10 100 1000 r th(ch-a) = 113.6 c/w i single pulse mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt pw - pulse width - s drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a -0 -5 -10 -15 -20 -25 -30 -0 -0.2 -0.4 -0.6 -0.8 pulsed ? 1.8 v v gs = ? 4.5 v ? 2.5 v v ds - drain to source voltage - v i d - drain current - a -0.0001 -0.001 -0.01 -0.1 -1 -10 -100 0 -0.5 -1 -1.5 -2 v ds = ? 10 v pulsed t ch = ? 25 c 25 c 75 c 125 c v gs - gate to source voltage - v 100 1 m 10 m 100 m 1 10 100 1000
data sheet g19452ej1v0ds 4 pa2211t1m gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate to source cut-off voltage - v 0 -0.2 -0.4 -0.6 -0.8 -1 -50 -25 0 25 50 75 100 125 150 175 v ds = ? 10 v i d = ? 1 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.01 0.1 1 10 100 -0.001 -0.01 -0.1 -1 -10 v ds = ? 10 v pulsed 75 c 125 c t ch = ? 25 c 25 c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 20 40 60 80 100 -0.1 -1 -10 -100 pulsed v gs = ? 1.8 v ? 4.5 v ? 2.5 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 20 40 60 80 100 0 -2-4-6-8 i d = ? 7.5 a pulsed v gs - gate to source voltage - v drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 10 20 30 40 50 60 -50 -25 0 25 50 75 100 125 150 175 i d = ? 3.8 a pulsed v gs = ? 1.8 v ? 4.5 v ? 2.5 v t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 -0.1 -1 -10 -100 v gs = 0 v f = 1 mhz c iss c oss c rss v ds - drain to source voltage - v
data sheet g19452ej1v0ds 5 pa2211t1m dynamic input/output characteristics source to drain diode forward voltage v ds - drain to source volta g e - v 0 -2 -4 -6 -8 -10 0481216 0 -1 -2 -3 -4 -5 i d = ? 7.5 a v ds v gs v dd = ? 9.6 v ? 6 v ? 2.4 v q g - gate charge - nc v gs - gate to source voltage - v i f - diode forward current - a -0.0001 -0.001 -0.01 -0.1 -1 -10 -100 0 0.5 1 1.5 pulsed v gs = ? 4 v 0 v v f(s-d) - source to drain voltage - v
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